Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
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چکیده
منابع مشابه
Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >105 cycles, and good data retention of >104 s with a good resistance ratio of >102 at 85°C are obtained using a Ti nanolayer to form a W/TiOx/TaOx/W structure under a low current operation of 80 μA, while few switching cycles are observed for W/TaOx/W structure under ...
متن کاملExcellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface
Excellent resistive switching memory characteristics were demonstrated for an Al/Cu/Ti/TaOx/W structure with a Ti nanolayer at the Cu/TaOx interface under low voltage operation of ± 1.5 V and a range of current compliances (CCs) from 0.1 to 500 μA. Oxygen accumulation at the Ti nanolayer and formation of a defective high-κ TaOx film were confirmed by high-resolution transmission electron micros...
متن کاملRetracted: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >10 cycles, and good data retention of >10 s with a good resistance ratio of >10 at 85°C are obtained using a Ti nanolayer to form a W/TiOx/TaOx/W structure under a low current operation of 80 μA, while few switching cycles are observed for W/TaOx/W structure under a h...
متن کاملRetraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
References 1. Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/ TaOx interface. Nanoscale Research Letters 2013, 9:152. 2. Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/ TaOx interface. Nanoscale Research L...
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We demonstrate enhanced repeatable nanoscale bipolar resistive switching memory characteristics in Al/Cu/Ge0.5Se0.5/W, as compared with Al/Cu/Ge0.2Se0.8/W structures, including stable AC endurance (>105 cycles), larger average SET voltage (approximately 0.6 V), excellent data retention (>105 s) at 85°C, and a high resistance ratio (>104) with a current compliance of 8 μA and a small operation v...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2013
ISSN: 1556-276X
DOI: 10.1186/1556-276x-8-288